In the AI server power SR MOS field, multiple ODM customers are currently leading the development. By integrating advanced thermal materials with specialized module packaging technology, the design incorporates Leadpower’s MOSFET into co-packing solution. Currently co-developing MOS chips for AI server motherboards, targeting mass production by the end of 2026.
In the field of AI servers, MOSFET chips must possess several key advantages to ensure high performance and reliability. The following are three key factors.
1.High Efficiency and Low Power Consumption
MOSFETs with low on-resistance (Rds(on)) minimize power loss, enhancing energy efficiency and
performance in AI server applications.
2.Thermal Management and Reliability
MOSFETs with superior thermal management and reliability enable stable, efficient, and durable power delivery helps stable system uptime.
3. Fast Switching Speed and Low Gate Charg
Low power consumption maximizes driving the MOSFET, which enables fast switching speed for improving power efficient. On the one hand, total power consumption decreases and the volume of passive component (inductors and capacitor) is minimized; on the other hand, the power density is improved.
Product
Power MOSFET Solution
| Part Number | Status | Package | Tj max (°C) | Qualification | Configuration | Type | ESD Protect | VDS (V) | VGS(±V) | ID (A) | PD (W) | Ron@10V(mΩ) | Ron@4.5V(mΩ) | Ron@2.5V(mΩ) | Ron@1.8V(mΩ) | VGS(th)(typV) | VGS(th)(maxV) | Ciss(pF) | Coss(pF) | Crss(pF) | Qg*(nC)@4.5V | Qg*(nC)@10V | Qgs(nC) | Qgd(nC) | Trr(ns) | Qrr(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Common Part | TOLL | 175 | Industrial | Single | N | NA | 100 | 20 | 434 | 375 | 1.3 | - | - | - | 3 | 4 | 13000 | 2147 | 398 | - | 231 | 70.2 | 65.7 | 120 | 400 | |
| PDFN-56 | 150 | Industrial | Single | N | NA | 150 | 20 | 16 | 36.7 | 65 | 82 | - | - | 2 | 3 | 642 | 50 | 14 | 5.3 | 9.9 | 2.8 | 1 | 42.6 | 49.3 | ||
| SOP-8 | 150 | Industrial | Single | N | NA | 150 | 20 | 3.3 | 1.5 | 65 | 82 | - | - | 2 | 3 | 642 | 50 | 15 | 5.3 | 10 | 2.8 | 1.05 | 42.5 | 49.5 | ||
| PDFN-56 | 150 | Industrial | Single | N | NA | 100 | 20 | 177 | 188 | 2.9 | - | - | - | 3 | 3.8 | 5293 | 1629 | 48 | - | 84 | 23 | 23 | 89 | 116 | ||
| Common Part | PDFN-56 | 150 | Industrial | Single | N | NA | 100 | 20 | 142 | 125 | 4.4 | - | - | - | 3 | 4 | 4175 | 1190 | 35 | - | 72.8 | 21.5 | 20.7 | 40.4 | 80.2 | |
| Common Part | LFPAK56 | 175 | Industrial | Single | N | NA | 80 | 20 | 200 | 188 | 2.5 | 4.3(6V) | - | - | 2.3 | 3 | 5103 | 1695 | 97 | - | 82 | 22 | 22 | 86 | 84 | |
| Common Part | PDFN-56 | 150 | Industrial | Single | N | NA | 80 | 20 | 350 | 125 | 3.7 | - | - | - | 3 | 4 | 3935 | 1160 | 101 | - | 84.2 | 26.5 | 16 | 60.5 | 86 | |
| Common Part | LFPAK56 | 175 | Industrial | Single | N | NA | 45 | 20 | 234 | 125 | 1.1 | - | - | - | 3 | 3.5 | 5236 | 1480 | 35 | - | 68 | 26 | 13 | 55 | 63 | |
| Common Part | LFPAK56 | 150 | Industrial | Single | N | NA | 30 | 20 | 287 | 104 | 0.87 | 1.35 | - | - | 1.5 | 2 | 6545 | 996 | 772 | 84 | 175.7 | 30.6 | 30 | 36.9 | 35.6 | |
| Part Number | Status | Package | Tj max (°C) | Qualification | Configuration | Type | ESD Protect | VDS (V) | VGS(±V) | ID (A) | PD (W) | Ron@10V(mΩ) | Ron@4.5V(mΩ) | Ron@2.5V(mΩ) | Ron@1.8V(mΩ) | VGS(th)(typV) | VGS(th)(maxV) | Ciss(pF) | Coss(pF) | Crss(pF) | Qg*(nC)@4.5V | Qg*(nC)@10V | Qgs(nC) | Qgd(nC) | Trr(ns) | Qrr(nC) |
