SGT MOSFETs - Leadpower-Semi 力源半導體

Product	BV(V)	VGS(±V)	Amp.(A)	ESD	Vth(V)min.	Vth(V)typ.	Vth(V)max.	Ron@10V(mΩ)typ.	Ron@10V(mΩ)max.	Ron@4.5V(mΩ)typ.	Ron@4.5V(mΩ)max.	Thickness(mil)	Gross Die(ea)
GL25N004AA4C	25	16	400	NA	1	2	3	0.4	-	-	-	4	2.9K
GL30N006AA4C	30	20	240	NA	1	1.6	2.2	0.65	-	1.1	-	4	2.9K
GL30N006AA1C	30	20	240	NA	1	1.6	2.2	0.65	-	1.1	-	4	2.9K
ML30N041AS1A	30	20	19.3		1	1.5	2	3.7	-	5	-	6	11KK
GL30N036AA1C	30	20	58	NA	1	1.7	2.2	3.8	-	6.2	-	6	20K
GL30N004AA4C	30	20	178	NA	1	1.7	2.3	-	-	-	-	4	2.4K
GL40N005AA4C	40	20	358	NA	1	1.7	2.3	0.45	-	0.9	-	4	2.4K
GL40N005AH4C	40	20	323	NA	2.1	-	3.5	0.55	-	-	-	4	2.4K
GL40N008AA4C	40	20	202	NA	1	1.7	2.2	0.8	-	1.2	-	4	2.9K
GL40N008AH4C	40	20	155	NA	2	3	4	0.8	-	-	-	4	2.9K
GL40N012AA4C	40	20	182	NA	1	1.8	2.5	0.9	-	1.6	-	4	4.1K
GL40N012AA1C	40	20	182	NA	1	1.8	2.5	0.9	-	1.6	-	4	4.1K
GL40N010AA1C	40	10	1	NA	1	1.8	2.5	1	1.3	1.5	2	4	3K
GL40N012AH4C	40	20	171	NA	2.5	3	3.5	1.1	-	-	-	4	4.1K
GL40N016AA1C	40	20	125	NA	1	1.8	2.5	1.45	-	2.3	-	4	6.4K
GL40N016AA4C	40	20	125	NA	1	1.8	2.5	1.45	-	2.3	-	4	6.4K
GL40N016AH1C	40	20	111	NA	2.5	3	3.5	1.9	-	-	-	4	6.4K
GL40N016AH4C	40	20	111	NA	2.5	3	3.5	1.9	-	-	-	4	6.4K
MGL40N048AA1A	40	20	54	NA	1	1.5	2.2	4.5	5.6	6.5	8.5	6	16.2K
GL40N047AA1C	40	20	58	NA	1	1.8	2.5	4.7	-	7.5	-	4	20K
GL40N047AH1C	40	20	48	NA	2	3	4	6	-	-	-	4	20K
GL40N012AH1C	40	20	139	NA	2.5	3	3.5	11	-	-	-	4	4.1K
GL45N005AA4C	45	20	358	NA	1	1.7	2.3	0.45	-	0.9	-	4	2.4K
GL45N005AH4C	45	20	323	NA	2.1	-	3.5	0.55	-	-	-	4	2.4K
GL45N009AA1C	45	20	214	NA	1	1.8	2.5	0.75	-	1.4	-	4	2.9K
GL45N009AA4C	45	20	214	NA	1	1.8	2.5	0.75	-	1.4	-	4	2.9K
GL45N008AH4C	45	20	259	NA	2	3	4	0.8	-	-	-	4	2.9K
GL45N009AH2C	45	20	155	NA	2.5	3	3.5	0.8	-	-	-	4	2.9K
GL45N009AH4C	45	20	155	NA	2.5	3	3.5	0.8	-	-	-	4	2.9K
GL45N013AA4C	45	20	148	NA	1	2	3	1.3	-	1.3	-	4	4.1K
Product	BV(V)	VGS(±V)	Amp.(A)	ESD	Vth(V)min.	Vth(V)typ.	Vth(V)max.	Ron@10V(mΩ)typ.	Ron@10V(mΩ)max.	Ron@4.5V(mΩ)typ.	Ron@4.5V(mΩ)max.	Thickness(mil)	Gross Die(ea)

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